. o ne, 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 vhp power mos transistor BLF147 features ? high power gain ? low intermodulation distortion ? easy power control ? good thermal stability ? withstands full load mismatch. description silicon n-channel enhancement mode vertical d-mos transistor designed for industrial and military applications in the hf/vhf frequency range. the transistor is encapsulated in a 4-lead, sot121 flange envelope, with a ceramic cap. all leads are isolated from the flange. a marking code, showing gate-source voltage (vcs) information is provided for matched pair applications. refer to 'general' section for further information. pin configuration fig.1 simplified outline and symbol. caution the device is supplied in an antistatic package. the gate-source input must be protected against static charge during transport and handling. pinning-sot121 pin 1 2 3 4 description drain source gate source quick reference data rf performance at th = 25 c in a common source test circuit. mode of operation ssb, class-ab cw, class-b f (mhz) 28 108 vds (v) 28 28 pl (w) 150 (pep) 150 gp (db) > 17 typ. 70 no (%) > 35 typ. 70 ds (db) < -30 - d5 (db) < -30 - nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placins orders. quality semi-conductors
vhp power mos transistor BLF147 limiting values in accordance with the absolute maximum system (iec 134). symbol vds vgs id plot tstg tj parameter drain-source voltage gate-source voltage dc drain current total power dissipation storage temperature junction temperature conditions up to tmb = 25 c min. - - - - -65 - max. 65 20 25 220 150 200 unit v v a w c c thermal resistance symbol rth j-mb "th mb-h parameter thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink thermal resistance 0.8 k/w 0.2 k/w (1) current is this area may be limited by rosio (2) tmb = 25"c, fig.2 dc soar. 300 100 150 th ( c) (1) short-time operation during mismatch (2) continuous operation. fig.3 power/temperature derating curves.
vhp power mos transistor BLF147 characteristics tj = 25 "c unless otherwise specified. symbol v(br)dss bss igss vosffh) avgs 9fs rds(on) idsx cis cos crs parameter drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage gate-source voltage difference of matched pairs forward transconductance drain-source on-state resistance on-state drain current input capacitance output capacitance feedback capacitance conditions id = 100ma; vgs = 0 vgs = 0; vds = 28 v vgs = 20 v; vds = 0 id = 200 ma; vds = 1 0 v id = 100ma; vds = 10v id = 8 a; vds = 10v id = 8 a; vgs = 10v vgs = 10 v; vds = 10v vgs = 0; vds = 28v;f=1 mhz vgs = 0; vds = 28v;f=1 mhz vgs = 0; vds = 28v|f=1 mhz min. 65 - - 2 ? 5 - - - - - typ. _ - - - ? 7.5 0.1 37 450 360 55 max. - 5 1 4.5 100 - 0.15 - - - - unit v ma ha v mv s q. a pf pf pf 0 t.c. (mv/k) 1 -2 -3 4 -5 1c vds = 28 fig.4 s f- /* - - - 7 y 1 - - msi i i- ~)--- jos0 ? -2 10~1 1 10 id (a) v; valid for th = 25 to 70 c temperature coefficient of gate-source voltage as a function of drain current, typical values. 10 15 . . .... 20 vgs (v) vds = 10v fig.5 drain current as a function of gate-source voltage, typical values.
vhp power mos transistor BLF147 package outline flanged ceramic package; 2 mounting holes; 4 leads sot121b d ? :t 10mm scale dimensions (millimetre dimensions are derived from the original inch dimensions) l p i unit inches 727 5,82 6,17 ! 5.56 0.286 0229 0.243 0.219 0.16 0,10 0.006 0004 12.86 12.83 12.59 12.57 0,506 0.505 0.496 0.495 h 2.67 2845 i 7.93 3.30 ! 445 241 0105 0095 2552 6.32 3.05 i 391 1,120 0.312 0130 1 005 0.249 0.120 0175 0154 1842 0725 24.90 648 1232 24,63 i 622 12 06 0.98 i 0 255 i 0 485 0,97 i 0 245 0 475 w1 051 1.02 h 45 002 0.04 issue date 97-06-28 ? j
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